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IPB80N06S209ATMA1
Product Overview
Category
The IPB80N06S209ATMA1 belongs to the category of power MOSFETs.
Use
It is used for high-power switching applications in various electronic devices and systems.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The IPB80N06S209ATMA1 is typically available in a TO-263 package.
Essence
This MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
It is commonly packaged in reels with varying quantities depending on the manufacturer's specifications.
Specifications
- Drain-Source Voltage (VDS): 60V
- Continuous Drain Current (ID): 80A
- On-Resistance (RDS(on)): 8.5mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 110nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPB80N06S209ATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various power applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid control of power flow.
- Low gate charge facilitates quick and precise gate control.
Advantages and Disadvantages
Advantages
- High voltage capability suitable for diverse applications
- Low on-resistance for improved efficiency
- Fast switching speed for precise power control
Disadvantages
- Higher gate charge compared to some alternative models
- Limited availability from certain suppliers
Working Principles
The IPB80N06S209ATMA1 operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPB80N06S209ATMA1 is widely used in the following applications: - Power supplies - Motor control - Inverters - Switched-mode power supplies - Automotive systems
Detailed and Complete Alternative Models
Some alternative models to the IPB80N06S209ATMA1 include: - IRF840 - FDP8870 - STP80NF03L
In conclusion, the IPB80N06S209ATMA1 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power management applications.
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Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van IPB80N06S209ATMA1 in technische oplossingen
What is the maximum drain-source voltage of IPB80N06S209ATMA1?
- The maximum drain-source voltage of IPB80N06S209ATMA1 is 60V.
What is the continuous drain current rating of IPB80N06S209ATMA1?
- The continuous drain current rating of IPB80N06S209ATMA1 is 80A.
What is the on-state resistance (RDS(on)) of IPB80N06S209ATMA1?
- The on-state resistance (RDS(on)) of IPB80N06S209ATMA1 is typically 8.5mΩ at VGS = 10V.
What is the gate threshold voltage of IPB80N06S209ATMA1?
- The gate threshold voltage of IPB80N06S209ATMA1 is typically 2.5V.
What are the recommended operating temperature range for IPB80N06S209ATMA1?
- The recommended operating temperature range for IPB80N06S209ATMA1 is -55°C to 175°C.
Is IPB80N06S209ATMA1 suitable for automotive applications?
- Yes, IPB80N06S209ATMA1 is designed for automotive applications and meets AEC-Q101 standards.
What is the package type of IPB80N06S209ATMA1?
- IPB80N06S209ATMA1 comes in a TO-263-7 package.
Does IPB80N06S209ATMA1 have built-in protection features?
- Yes, IPB80N06S209ATMA1 has built-in overcurrent protection and thermal shutdown features.
Can IPB80N06S209ATMA1 be used in high-frequency switching applications?
- Yes, IPB80N06S209ATMA1 is suitable for high-frequency switching due to its low RDS(on) and fast switching characteristics.
What are some typical applications for IPB80N06S209ATMA1?
- Typical applications for IPB80N06S209ATMA1 include motor control, power supplies, DC-DC converters, and automotive systems.