onsemi (Ansemi)
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NCP5106BDR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side

NCP5106BDR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side
Onderdeel nummer
NCP5106BDR2G
Categorie
Power Chip > Gate Driver IC
Fabrikant/merk
onsemi (Ansemi)
Inkapseling
SOIC-8-150mil
Inpakken
taping
Aantal pakketten
2500
Beschrijving
The NCP5106 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half-bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
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Op voorraad 75348 PCS
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Trefwoorden vanNCP5106BDR2G
NCP5106BDR2G Elektronische componenten
NCP5106BDR2G verkoop
NCP5106BDR2G Leverancier
NCP5106BDR2G Distributeur
NCP5106BDR2G Data tafel
NCP5106BDR2G Foto's
NCP5106BDR2G Prijs
NCP5106BDR2G Aanbod
NCP5106BDR2G Laagste prijs
NCP5106BDR2G Zoekopdracht
NCP5106BDR2G Inkoop
NCP5106BDR2G Chip