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SQJ848EP-T1_GE3
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SQJ848EP-T1_GE3

Product Overview

Category: Semiconductor
Use: Power MOSFET
Characteristics: High voltage, low on-resistance, fast switching
Package: TO-263-3
Essence: Efficient power management
Packaging/Quantity: Tape & Reel, 2500 units

Specifications

  • Voltage Rating: 100V
  • Current Rating: 60A
  • On-Resistance: 8.5mΩ
  • Gate Charge: 40nC
  • Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

  1. Gate
  2. Drain
  3. Source

Functional Features

  • Low on-resistance for high efficiency
  • Fast switching for improved performance
  • High voltage rating for versatile applications

Advantages and Disadvantages

Advantages: - High voltage rating - Low on-resistance - Fast switching speed

Disadvantages: - Sensitive to overvoltage conditions - Higher gate charge compared to some alternatives

Working Principles

The SQJ848EP-T1_GE3 operates by controlling the flow of current between the drain and source terminals using the gate voltage. When a suitable voltage is applied to the gate, the MOSFET allows current to flow through, and when the gate voltage is removed, the current flow ceases.

Detailed Application Field Plans

This MOSFET is ideal for use in various power management applications, including: - Switching power supplies - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models

  • IRF1010E
  • FDP8870
  • STP80NF70

In conclusion, the SQJ848EP-T1_GE3 is a high-voltage power MOSFET with low on-resistance and fast switching characteristics, making it suitable for a wide range of power management applications.

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Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van SQJ848EP-T1_GE3 in technische oplossingen

  1. What is the operating temperature range of SQJ848EP-T1_GE3?

    • The operating temperature range of SQJ848EP-T1_GE3 is typically -55°C to 150°C.

  2. What is the maximum drain-source voltage rating of SQJ848EP-T1_GE3?

    • The maximum drain-source voltage rating of SQJ848EP-T1_GE3 is typically 40V.

  3. What is the typical on-resistance of SQJ848EP-T1_GE3?

    • The typical on-resistance of SQJ848EP-T1_GE3 is 8mΩ.

  4. What are the typical applications for SQJ848EP-T1_GE3?

    • SQJ848EP-T1_GE3 is commonly used in power management, load switching, and battery protection applications.

  5. What is the maximum continuous drain current of SQJ848EP-T1_GE3?

    • The maximum continuous drain current of SQJ848EP-T1_GE3 is typically 100A.

  6. Does SQJ848EP-T1_GE3 have built-in ESD protection?

    • Yes, SQJ848EP-T1_GE3 features built-in ESD protection, making it suitable for robust and reliable designs.

  7. What is the gate threshold voltage of SQJ848EP-T1_GE3?

    • The gate threshold voltage of SQJ848EP-T1_GE3 is typically 2.5V.

  8. Is SQJ848EP-T1_GE3 RoHS compliant?

    • Yes, SQJ848EP-T1_GE3 is RoHS compliant, meeting environmental standards.

  9. What package type does SQJ848EP-T1_GE3 come in?

    • SQJ848EP-T1_GE3 is available in a PowerPAK® SO-8 package, offering a compact and efficient form factor.

  10. Can SQJ848EP-T1_GE3 be used in automotive applications?

    • Yes, SQJ848EP-T1_GE3 is suitable for automotive applications, providing high performance and reliability in demanding environments.