SQD25N15-52_GE3

Product Overview

Category:

The SQD25N15-52_GE3 belongs to the category of power MOSFETs.

Use:

It is used as a switching device in various electronic circuits and power applications.

Characteristics:

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge

Package:

The SQD25N15-52_GE3 is typically available in a TO-252 package.

Essence:

This MOSFET is essential for efficient power management and control in electronic systems.

Packaging/Quantity:

It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

• Drain-Source Voltage (VDS): 150V
• Continuous Drain Current (ID): 25A
• RDS(ON) Max: 0.052Ω
• Gate-Source Voltage (VGS): ±20V
• Total Gate Charge (Qg): 30nC

Detailed Pin Configuration

The SQD25N15-52_GE3 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Low on-resistance for minimal power dissipation
• Fast switching speed for improved efficiency
• High voltage capability for versatile applications

Advantages

• Efficient power management
• Suitable for high voltage applications
• Fast and reliable switching performance

Disadvantages

• Sensitive to static electricity
• Requires careful handling during installation

Working Principles

The SQD25N15-52_GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is widely used in various applications including: - Switching power supplies - Motor control - Inverters - LED lighting - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the SQD25N15-52_GE3 include: - IRF540N - FQP30N06L - STP55NF06L

In conclusion, the SQD25N15-52_GE3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power applications.

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