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SI4804BDY-T1-GE3

SI4804BDY-T1-GE3

Product Overview

Category

The SI4804BDY-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and power switching.

Characteristics

  • High efficiency
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SI4804BDY-T1-GE3 is available in a compact and efficient PowerPAK® SO-8 package.

Essence

This MOSFET offers high performance and reliability in power management applications.

Packaging/Quantity

It is typically supplied in reels with a quantity of 3000 units per reel.

Specifications

  • Drain-Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 9.2A
  • RDS(ON) (Max) @ Vgs = 10V: 6.5mΩ
  • Gate-Source Voltage (Vgs): ±20V
  • Total Gate Charge (Qg): 11nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI4804BDY-T1-GE3 features the following pin configuration: 1. GATE 2. DRAIN 3. SOURCE 4. N/C 5. SOURCE 6. DRAIN 7. SOURCE 8. GATE

Functional Features

  • Low on-resistance for minimal power dissipation
  • Fast switching speed for efficient power management
  • High current handling capability for robust performance

Advantages and Disadvantages

Advantages

  • High efficiency
  • Compact package size
  • Reliable performance in power management applications

Disadvantages

  • Limited voltage and current ratings compared to higher-power MOSFETs
  • Sensitive to static discharge if mishandled

Working Principles

The SI4804BDY-T1-GE3 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to efficiently control power flow in various applications.

Detailed Application Field Plans

The SI4804BDY-T1-GE3 is well-suited for use in: - DC-DC converters - Voltage regulators - Motor control circuits - Power supply units

Detailed and Complete Alternative Models

Some alternative models to the SI4804BDY-T1-GE3 include: - SI2304DDS-T1-GE3 - SI5435DU-T1-GE3 - SI7856DY-T1-GE3

In conclusion, the SI4804BDY-T1-GE3 power MOSFET offers high performance and reliability in power management applications, making it a valuable component in various electronic systems.

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Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van SI4804BDY-T1-GE3 in technische oplossingen

  1. What is the maximum operating voltage of SI4804BDY-T1-GE3?

    • The maximum operating voltage of SI4804BDY-T1-GE3 is typically 20V.
  2. What is the typical on-resistance of SI4804BDY-T1-GE3?

    • The typical on-resistance of SI4804BDY-T1-GE3 is 8 mΩ.
  3. What is the maximum continuous drain current of SI4804BDY-T1-GE3?

    • The maximum continuous drain current of SI4804BDY-T1-GE3 is 40A.
  4. What is the gate threshold voltage of SI4804BDY-T1-GE3?

    • The gate threshold voltage of SI4804BDY-T1-GE3 is typically 1V.
  5. What are the recommended operating temperature range for SI4804BDY-T1-GE3?

    • The recommended operating temperature range for SI4804BDY-T1-GE3 is -55°C to 150°C.
  6. Is SI4804BDY-T1-GE3 suitable for automotive applications?

    • Yes, SI4804BDY-T1-GE3 is suitable for automotive applications.
  7. What is the package type of SI4804BDY-T1-GE3?

    • SI4804BDY-T1-GE3 comes in a PowerPAK® SO-8 package.
  8. Does SI4804BDY-T1-GE3 have built-in ESD protection?

    • Yes, SI4804BDY-T1-GE3 features built-in ESD protection.
  9. Can SI4804BDY-T1-GE3 be used in power management applications?

    • Yes, SI4804BDY-T1-GE3 is commonly used in power management applications.
  10. What are the typical applications for SI4804BDY-T1-GE3?

    • Typical applications for SI4804BDY-T1-GE3 include load switching, battery protection, and power distribution.