2N5116-E3

Product Overview

Use

This BJT is commonly used for amplification and switching of electronic signals in various applications.

Characteristics

High current gain
Low noise
Medium power dissipation
Moderate frequency response

Package

The 2N5116-E3 is typically available in a TO-92 package, which is a small, through-hole transistor package.

Essence

The essence of the 2N5116-E3 lies in its ability to amplify and switch electronic signals with high reliability and moderate performance characteristics.

Packaging/Quantity

It is usually supplied in reels or tubes, with quantities varying based on manufacturer and distributor specifications.

Specifications

Collector-Base Voltage (Vcbo): [Value] V
Collector-Emitter Voltage (Vceo): [Value] V
Emitter-Base Voltage (Vebo): [Value] V
Collector Current (Ic): [Value] A
Power Dissipation (Pd): [Value] W
Transition Frequency (ft): [Value] MHz
Operating Temperature Range: [Value] °C to [Value] °C

Detailed Pin Configuration

The 2N5116-E3 has three pins: 1. Collector (C) 2. Base (B) 3. Emitter (E)

Functional Features

High current gain
Low noise figure
Suitable for general-purpose amplification and switching applications

Advantages

Reliable amplification capabilities
Low noise performance
Versatile usage in various electronic circuits

Disadvantages

Moderate power dissipation capability
Limited frequency response compared to higher-end transistors

Working Principles

The 2N5116-E3 operates based on the principles of bipolar junction transistors, utilizing the interaction between minority and majority charge carriers to control the flow of current.

Detailed Application Field Plans

The 2N5116-E3 finds application in: - Audio amplifiers - Signal processing circuits - Switching circuits - Oscillator circuits

Detailed and Complete Alternative Models

2N3904
BC547
2N2222

In conclusion, the 2N5116-E3 is a versatile BJT suitable for a wide range of amplification and switching applications, offering reliable performance with moderate power dissipation and frequency response. Its use in audio amplifiers, signal processing, and switching circuits makes it a valuable component in electronic design.

[Word count: 314]

Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van 2N5116-E3 in technische oplossingen

What is the 2N5116-E3?
- The 2N5116-E3 is a high-frequency, NPN bipolar junction transistor (BJT) commonly used in RF and microwave applications.
What are the key specifications of the 2N5116-E3?
- The 2N5116-E3 features a maximum collector-base voltage of 40V, a maximum collector current of 0.5A, and a power dissipation of 0.8W.
What are the typical applications of the 2N5116-E3?
- This transistor is often used in RF amplifiers, oscillators, mixers, and other high-frequency circuits.
What are the important considerations when designing with the 2N5116-E3?
- Designers should pay attention to biasing, matching impedances, and ensuring proper thermal management due to its high-frequency operation.
What are some common alternatives to the 2N5116-E3?
- Alternatives include transistors such as the 2N5109, 2N3866, and MRF947.
How do I properly bias the 2N5116-E3 for my application?
- Biasing can be achieved using appropriate resistors and DC voltage sources to establish the desired operating point.
What are the typical gain and noise figure characteristics of the 2N5116-E3?
- The gain can vary based on the specific circuit configuration, while the noise figure is typically low, making it suitable for low-noise amplifier applications.
Can the 2N5116-E3 be used in push-pull configurations?
- Yes, this transistor can be utilized in push-pull amplifier designs to achieve higher output power and improved linearity.
What are the recommended operating conditions for the 2N5116-E3?
- Operating within the specified temperature range, voltage, and current limits outlined in the datasheet is crucial for reliable performance.
Where can I find detailed application notes and reference designs for the 2N5116-E3?
- Manufacturers' websites, technical forums, and application notes from semiconductor companies often provide valuable resources for designing with the 2N5116-E3.