OPB861N55

Product Overview

Category: Optoelectronics
Use: Optical sensor for object detection and position sensing
Characteristics: High sensitivity, compact size, reliable performance
Package: Through-hole package
Essence: Utilizes infrared light to detect objects
Packaging/Quantity: Available in reels of 1000 units

Specifications

Emitter Type: Infrared LED
Detector Type: Phototransistor
Sensing Distance: Up to 3mm
Operating Wavelength: 890nm
Output Configuration: Phototransistor (NPN)
Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

Anode (+) of Infrared LED
Cathode (-) of Infrared LED
Collector of Phototransistor
Emitter of Phototransistor
Base of Phototransistor

Functional Features

High sensitivity to infrared light
Fast response time
Compact design for easy integration
Low power consumption

Advantages and Disadvantages

Advantages

Reliable object detection
Compact size for space-constrained applications
Wide operating temperature range

Disadvantages

Limited sensing distance
Susceptible to ambient light interference

Working Principles

The OPB861N55 operates on the principle of infrared light reflection. The infrared LED emits light, which is then reflected off an object and detected by the phototransistor. When an object is present within the sensing distance, the phototransistor conducts, indicating the presence of the object.

Detailed Application Field Plans

The OPB861N55 is suitable for various applications including: - Object detection in automated machinery - Position sensing in robotics - Proximity sensing in consumer electronics

Detailed and Complete Alternative Models

OPB9001: Longer sensing distance but larger package size
OPB720: Lower power consumption but reduced sensitivity

Note: The alternative models listed above are for reference purposes and may not directly substitute the OPB861N55 in all applications.

This entry provides a comprehensive overview of the OPB861N55, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van OPB861N55 in technische oplossingen

What is OPB861N55?
- OPB861N55 is a high-performance, low on-resistance N-channel power MOSFET designed for various technical solutions.
What are the key features of OPB861N55?
- The key features include a low on-resistance, high current capability, and a compact package design.
What technical solutions can OPB861N55 be used in?
- OPB861N55 can be used in applications such as power supplies, motor control, LED lighting, and battery management systems.
What is the maximum current rating of OPB861N55?
- The maximum continuous drain current rating of OPB861N55 is typically 60A.
What is the voltage rating of OPB861N55?
- The voltage rating of OPB861N55 is typically 55V.
Does OPB861N55 have built-in protection features?
- Yes, OPB861N55 has built-in protection against overcurrent, over-temperature, and short-circuit conditions.
What is the typical switching frequency range for OPB861N55?
- The typical switching frequency range for OPB861N55 is from a few kHz to several MHz.
Is OPB861N55 suitable for automotive applications?
- Yes, OPB861N55 is suitable for automotive applications due to its high current capability and robust design.
Can OPB861N55 be used in high-temperature environments?
- Yes, OPB861N55 is designed to operate reliably in high-temperature environments, making it suitable for industrial and automotive applications.
Where can I find detailed technical specifications and application notes for OPB861N55?
- Detailed technical specifications and application notes for OPB861N55 can be found on the manufacturer's website or in the product datasheet.