M50100TB1200

Product Overview

• Category: Power semiconductor device
• Use: High-power switching applications
• Characteristics: Fast switching, high voltage capability, low on-state resistance
• Package: TO-220AB
• Essence: Efficient power control
• Packaging/Quantity: Individual packaging, quantity varies by supplier

Specifications

• Voltage Rating: 1200V
• Current Rating: 100A
• Package Type: TO-220AB
• Mounting Type: Through Hole
• Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

• Pin 1: Gate
• Pin 2: Collector
• Pin 3: Emitter

Functional Features

• Fast switching speed
• Low on-state resistance
• High voltage capability
• Robust and reliable performance

Advantages and Disadvantages

• Advantages:
  • Efficient power control
  • Suitable for high-power applications
  • Fast switching speed
• Disadvantages:
  • Higher cost compared to lower power devices
  • Requires careful thermal management due to high power dissipation

Working Principles

The M50100TB1200 operates based on the principles of power semiconductor devices, utilizing its fast switching speed and high voltage capability to control power flow in high-power applications.

Detailed Application Field Plans

• Industrial motor drives
• Power supplies
• Renewable energy systems
• Electric vehicle powertrains

Detailed and Complete Alternative Models

• M50100TB1000
• M50150TB1200
• M50200TB1200
• M50100TB1400

This comprehensive entry provides a detailed overview of the M50100TB1200, covering its specifications, features, advantages, and application fields.