NSVMUN2112T1G

Product Overview

Category: Transistor
Use: Amplification and switching in electronic circuits
Characteristics: High voltage, high current capability, low power consumption
Package: TO-261-3 (SOT-223)
Essence: NPN Bipolar Junction Transistor
Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 600mA
Power - Max: 625mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 1V
Transition Frequency: 250MHz
Noise Figure (dB Typ @ f): 2.5dB @ 1kHz

Detailed Pin Configuration

Base
Emitter
Collector

Functional Features

High voltage capability
Low saturation voltage
Fast switching speed
Low noise figure

Advantages

Suitable for high-speed switching applications
Compact SOT-223 package
Low power consumption

Disadvantages

Limited maximum current compared to some alternatives
Moderate transition frequency

Working Principles

The NSVMUN2112T1G is a bipolar junction transistor that operates by controlling the flow of current between its collector and emitter terminals using a small current at its base terminal. This allows it to amplify or switch electronic signals in various circuit configurations.

Detailed Application Field Plans

The NSVMUN2112T1G is commonly used in audio amplifiers, motor control circuits, and general-purpose switching applications. Its high voltage capability makes it suitable for use in power supply circuits as well.

Detailed and Complete Alternative Models

BC547B: Similar NPN transistor with lower voltage and current ratings
2N3904: General-purpose NPN transistor with comparable characteristics
MMBT2222A: SMD NPN transistor with similar specifications

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This content provides a comprehensive overview of the NSVMUN2112T1G transistor, covering its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models. If you need further details on any specific aspect, feel free to ask!

Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van NSVMUN2112T1G in technische oplossingen

Sure, here are 10 common questions and answers related to the application of NSVMUN2112T1G in technical solutions:

What is NSVMUN2112T1G?
- NSVMUN2112T1G is a high-speed, low-capacitance diode array designed to protect high-speed data lines from ESD and surge damage.
What is the maximum operating voltage of NSVMUN2112T1G?
- The maximum operating voltage of NSVMUN2112T1G is 5.5V.
What is the typical capacitance of NSVMUN2112T1G?
- The typical capacitance of NSVMUN2112T1G is 0.6pF per I/O pin.
What is the peak pulse current of NSVMUN2112T1G?
- The peak pulse current of NSVMUN2112T1G is 2A per I/O pin.
What is the package type of NSVMUN2112T1G?
- NSVMUN2112T1G comes in a compact SOT-563 package.
What are the typical applications of NSVMUN2112T1G?
- NSVMUN2112T1G is commonly used for protecting high-speed data lines in applications such as USB, HDMI, Ethernet, and other high-speed interfaces.
Does NSVMUN2112T1G support bidirectional protection?
- Yes, NSVMUN2112T1G provides bidirectional protection for each I/O pin.
What is the operating temperature range of NSVMUN2112T1G?
- The operating temperature range of NSVMUN2112T1G is -55°C to 125°C.
Is NSVMUN2112T1G compliant with RoHS requirements?
- Yes, NSVMUN2112T1G is compliant with RoHS requirements.
Can NSVMUN2112T1G be used in automotive applications?
- Yes, NSVMUN2112T1G is suitable for use in automotive electronics due to its robustness and reliability.

I hope these questions and answers are helpful! Let me know if you need further assistance.