ON Semiconductor
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MMBF170LT1G
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MMBF170LT1G

Product Overview

Category: Transistor
Use: Amplification and switching of electronic signals
Characteristics: Low power, high voltage, small signal N-channel field-effect transistor
Package: SOT-23
Essence: Small size, low power consumption, high voltage capability
Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 0.22A
  • Total Power Dissipation (PD): 225mW
  • Operating Temperature Range (TJ): -55°C to +150°C

Detailed Pin Configuration

  1. Source (S)
  2. Gate (G)
  3. Drain (D)

Functional Features

  • High input impedance
  • Low output capacitance
  • Fast switching speed
  • Low noise

Advantages

  • Small size
  • Low power consumption
  • High voltage capability
  • Suitable for low-level signal amplification

Disadvantages

  • Limited continuous drain current
  • Limited power dissipation

Working Principles

The MMBF170LT1G operates based on the field-effect transistor principle, where the flow of current between the source and drain terminals is controlled by the voltage applied to the gate terminal.

Detailed Application Field Plans

  1. Audio amplification circuits
  2. Signal processing circuits
  3. Low-power switching applications
  4. Sensor interfaces

Detailed and Complete Alternative Models

  1. 2N7002LT1G
  2. BSS138LT1G
  3. DMN1019USN-13

Note: The above information is provided for reference purposes only. Always refer to the official datasheet for accurate specifications and details.

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Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van MMBF170LT1G in technische oplossingen

  1. What is MMBF170LT1G?

    • MMBF170LT1G is a small signal N-channel JFET transistor designed for general purpose amplifier and switching applications.

  2. What are the key features of MMBF170LT1G?

    • The key features include low on-state resistance, high forward transfer admittance, and low input capacitance.

  3. What are the typical applications of MMBF170LT1G?

    • Typical applications include audio amplifiers, analog switches, signal processing circuits, and voltage-controlled resistors.

  4. What is the maximum drain-source voltage for MMBF170LT1G?

    • The maximum drain-source voltage is 25V.

  5. What is the maximum continuous drain current for MMBF170LT1G?

    • The maximum continuous drain current is 50mA.

  6. What is the typical input capacitance of MMBF170LT1G?

    • The typical input capacitance is 6pF.

  7. What is the typical gate-source cutoff voltage for MMBF170LT1G?

    • The typical gate-source cutoff voltage is -0.8V to -3V.

  8. What are the recommended operating conditions for MMBF170LT1G?

    • The recommended operating conditions include a maximum junction temperature of 150°C and a storage temperature range of -55°C to 150°C.

  9. Can MMBF170LT1G be used in low noise amplifier circuits?

    • Yes, MMBF170LT1G can be used in low noise amplifier circuits due to its low input capacitance and high forward transfer admittance.

  10. Where can I find detailed technical specifications for MMBF170LT1G?

    • Detailed technical specifications can be found in the datasheet provided by the manufacturer or distributor of the component.