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MBT3904DW1T1G
Product Overview
Category
The MBT3904DW1T1G belongs to the category of NPN Bipolar Transistors.
Use
It is commonly used as a general-purpose amplifier or switch in electronic circuits.
Characteristics
- Low power dissipation
- High current gain
- Low noise
- Fast switching speed
Package
The MBT3904DW1T1G is typically available in a SOT-363 package.
Essence
This transistor is essential for amplifying and switching electronic signals in various applications.
Packaging/Quantity
It is usually supplied in reels with a quantity varying based on the manufacturer's specifications.
Specifications
- Collector-Base Voltage (VCBO): 40V
- Collector-Emitter Voltage (VCEO): 40V
- Emitter-Base Voltage (VEBO): 6V
- Collector Current (IC): 200mA
- Power Dissipation (PD): 300mW
- Transition Frequency (fT): 250MHz
Detailed Pin Configuration
The MBT3904DW1T1G has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)
Functional Features
- High current gain
- Low saturation voltage
- Fast switching speed
- Low noise
Advantages and Disadvantages
Advantages
- Versatile usage in various electronic circuits
- Low power dissipation
- High current gain allows for signal amplification
Disadvantages
- Limited maximum collector current compared to other transistors
- Relatively low breakdown voltage
Working Principles
The MBT3904DW1T1G operates based on the principles of bipolar junction transistors, where the flow of current between the collector and emitter is controlled by the base current.
Detailed Application Field Plans
The MBT3904DW1T1G is widely used in: - Audio amplifiers - Signal processing circuits - Switching circuits - Oscillator circuits - Voltage regulators
Detailed and Complete Alternative Models
Some alternative models to the MBT3904DW1T1G include: - 2N3904 - BC547 - 2SC945 - PN2222A
In conclusion, the MBT3904DW1T1G NPN Bipolar Transistor offers versatile functionality in electronic circuits, making it a popular choice for various applications.
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Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van MBT3904DW1T1G in technische oplossingen
What is the maximum collector current of MBT3904DW1T1G?
- The maximum collector current of MBT3904DW1T1G is 200mA.
What is the typical DC current gain (hFE) of MBT3904DW1T1G?
- The typical DC current gain (hFE) of MBT3904DW1T1G is 100-300.
What is the maximum power dissipation of MBT3904DW1T1G?
- The maximum power dissipation of MBT3904DW1T1G is 350mW.
What is the maximum voltage across the collector and emitter (Vce) of MBT3904DW1T1G?
- The maximum voltage across the collector and emitter (Vce) of MBT3904DW1T1G is 40V.
What are the typical applications for MBT3904DW1T1G?
- Typical applications for MBT3904DW1T1G include amplification, switching, and general purpose use in electronic circuits.
Is MBT3904DW1T1G suitable for low noise amplifier designs?
- Yes, MBT3904DW1T1G is suitable for low noise amplifier designs due to its low noise characteristics.
What are the recommended operating conditions for MBT3904DW1T1G?
- The recommended operating conditions for MBT3904DW1T1G include a collector current (Ic) of 10mA, a collector-emitter voltage (Vce) of 20V, and a base current (Ib) of 1mA.
Can MBT3904DW1T1G be used in high-frequency applications?
- Yes, MBT3904DW1T1G can be used in high-frequency applications due to its fast switching speed and high cutoff frequency.
Does MBT3904DW1T1G require any external components for basic operation?
- MBT3904DW1T1G requires external resistors and capacitors for biasing and filtering in typical circuit configurations.
What are the thermal characteristics of MBT3904DW1T1G?
- The thermal resistance from junction to ambient (RθJA) of MBT3904DW1T1G is 357°C/W, and the thermal resistance from junction to solder point (RθJS) is 83.3°C/W.