MRF21045LSR3

Introduction

The MRF21045LSR3 is a high-frequency, RF power field-effect transistor (FET) designed for use in applications such as industrial, scientific, and medical (ISM) radio frequency (RF) power amplifiers. This entry provides an overview of the product, including its category, use, characteristics, package, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: RF Power Field-Effect Transistor
• Use: Industrial, Scientific, and Medical (ISM) Radio Frequency (RF) Power Amplifiers
• Characteristics: High-frequency operation, high power output, low distortion
• Package: Surface Mount
• Essence: High-performance RF power amplification
• Packaging/Quantity: Available in various packaging options with specific quantities

Specifications

• Frequency Range: 2110 - 2170 MHz
• Output Power: 16 W
• Gain: 14 dB
• Efficiency: 40%
• Voltage: 28 V
• Current: 1.5 A

Detailed Pin Configuration

The MRF21045LSR3 features a detailed pin configuration that includes input, output, and biasing pins. The pinout diagram provides clear guidance on connecting the transistor within a circuit.

Functional Features

• High Power Output: Capable of delivering 16 W of power
• Broad Frequency Range: Operates within the 2110 - 2170 MHz range
• High Gain: Provides 14 dB of gain for efficient signal amplification
• High Efficiency: Achieves 40% efficiency, minimizing power loss

Advantages and Disadvantages

Advantages

• High power output for RF amplification
• Wide frequency range coverage
• High gain and efficiency for effective signal amplification

Disadvantages

• Limited to specific frequency range
• Requires careful handling due to its high-power nature

Working Principles

The MRF21045LSR3 operates based on the principles of field-effect transistors, utilizing its high-frequency capabilities to amplify RF signals efficiently. By applying appropriate biasing and input signals, it delivers high-power output with minimal distortion.

Detailed Application Field Plans

The MRF21045LSR3 finds extensive application in ISM RF power amplifiers used in industrial, scientific, and medical equipment. It is commonly employed in RF heating systems, plasma generation, and other high-power RF applications where reliable and efficient power amplification is essential.

Detailed and Complete Alternative Models

• MRF21030LR5: Offers similar performance with a different frequency range
• MRF21060R5: Provides higher power output within a similar frequency range
• MRF21085LSR3: Offers enhanced efficiency and gain characteristics

In conclusion, the MRF21045LSR3 serves as a crucial component in high-power RF amplification systems, catering to a wide range of industrial, scientific, and medical applications. Its high performance, broad frequency coverage, and efficient operation make it a valuable choice for RF power amplification needs.

[Word Count: 410]