MRF21030LR3

Introduction

The MRF21030LR3 is a high-frequency, high-power N-channel enhancement-mode lateral MOSFET designed for use in RF power amplifiers. This device offers exceptional performance and reliability, making it suitable for a wide range of applications.

Basic Information Overview

• Category: RF Power Amplifier Component
• Use: The MRF21030LR3 is used to amplify radio frequency signals in various communication systems, including base stations, radar systems, and industrial applications.
• Characteristics: High-frequency operation, high power handling capability, low distortion, and excellent thermal performance.
• Package: The MRF21030LR3 is available in a compact and rugged package suitable for demanding environments.
• Essence: The essence of the MRF21030LR3 lies in its ability to deliver high-power RF amplification with high efficiency and linearity.
• Packaging/Quantity: The device is typically supplied in tape and reel packaging for automated assembly processes.

Specifications

• Frequency Range: 2110 - 2170 MHz
• Output Power: 30 Watts
• Gain: 15 dB
• Efficiency: 50%
• Operating Voltage: 28 V
• Operating Temperature Range: -40°C to +100°C

Detailed Pin Configuration

The MRF21030LR3 features a 7-pin flange-mount package with the following pin configuration: 1. Gate 2. Drain 3. Source 4. Not Connected 5. Not Connected 6. Source 7. Drain

Functional Features

• High Power Gain: The device offers high gain to amplify weak input signals effectively.
• Broad Frequency Coverage: It operates within a wide frequency range, making it versatile for different applications.
• Excellent Linearity: The MOSFET maintains signal integrity by minimizing distortion, crucial for high-quality RF amplification.

Advantages and Disadvantages

Advantages

• High Power Handling
• Wide Frequency Range
• Low Distortion

Disadvantages

• Higher Cost Compared to Lower Power Alternatives
• Requires Adequate Thermal Management

Working Principles

The MRF21030LR3 operates based on the principles of MOSFET amplification, where the input RF signal modulates the conductivity of the channel between the drain and source terminals, resulting in amplified output at the drain terminal.

Detailed Application Field Plans

The MRF21030LR3 is well-suited for the following application fields: - Cellular Base Stations - Radar Systems - Industrial RF Heating Systems - Broadcast Transmitters

Detailed and Complete Alternative Models

• MRF21030L: Lower power version of the MRF21030LR3, suitable for applications requiring reduced power levels.
• MRF21030LSR3: A surface-mount variant of the MRF21030LR3, offering flexibility in PCB design.

In conclusion, the MRF21030LR3 is a high-performance RF power amplifier component that caters to the demands of modern communication and industrial systems, providing reliable and efficient RF amplification.

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