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PSMN1R8-30PL,127
Product Overview
Category
The PSMN1R8-30PL,127 belongs to the category of power MOSFETs.
Use
It is used for high-power switching applications in various electronic circuits and systems.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The PSMN1R8-30PL,127 is typically available in a TO-220 package.
Essence
This MOSFET is essential for efficient power management and control in electronic devices and systems.
Packaging/Quantity
It is commonly packaged in reels or tubes, with varying quantities depending on the supplier.
Specifications
- Drain-Source Voltage (VDS): 30V
- Continuous Drain Current (ID): 160A
- On-Resistance (RDS(on)): 1.8mΩ
- Power Dissipation (PD): 300W
- Gate-Source Voltage (VGS): ±20V
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The PSMN1R8-30PL,127 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High current-carrying capability
- Low conduction losses
- Fast switching characteristics
- Suitable for high-frequency applications
Advantages and Disadvantages
Advantages
- Low on-resistance leading to reduced power dissipation
- High current-handling capacity
- Fast switching speed for improved efficiency
Disadvantages
- Higher gate capacitance compared to some alternative models
- Limited voltage rating compared to certain high-voltage applications
Working Principles
The PSMN1R8-30PL,127 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
The PSMN1R8-30PL,127 is widely used in the following applications: - Switched-mode power supplies - Motor control systems - Class-D audio amplifiers - DC-DC converters - Electronic load switches
Detailed and Complete Alternative Models
Some alternative models to the PSMN1R8-30PL,127 include: - IRF3205 - FDP8870 - STP80NF70
In conclusion, the PSMN1R8-30PL,127 power MOSFET offers high-performance characteristics suitable for a wide range of high-power switching applications, making it an essential component in modern electronic systems.
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Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van PSMN1R8-30PL,127 in technische oplossingen
What is the PSMN1R8-30PL,127?
- The PSMN1R8-30PL,127 is a power MOSFET transistor designed for use in various technical solutions requiring high power and efficiency.
What is the maximum voltage and current rating of PSMN1R8-30PL,127?
- The maximum voltage rating is typically 100V, and the maximum continuous drain current is around 80A.
What are the typical applications of PSMN1R8-30PL,127?
- It is commonly used in applications such as motor control, power supplies, DC-DC converters, and automotive systems.
What is the on-resistance of PSMN1R8-30PL,127?
- The on-resistance at Vgs=10V is typically around 1.8mΩ.
Is PSMN1R8-30PL,127 suitable for high-frequency switching applications?
- Yes, it is designed to perform well in high-frequency switching applications due to its low on-resistance and fast switching characteristics.
Does PSMN1R8-30PL,127 require a heatsink for operation?
- Depending on the application and power dissipation, a heatsink may be required to ensure proper thermal management.
What is the thermal resistance of PSMN1R8-30PL,127?
- The typical junction-to-case thermal resistance is around 0.5°C/W.
Can PSMN1R8-30PL,127 be used in parallel to increase current handling capability?
- Yes, it can be used in parallel to increase the overall current handling capability in high-power applications.
What are the recommended gate drive voltage levels for PSMN1R8-30PL,127?
- The recommended gate drive voltage is typically between 8V to 10V for optimal performance.
Is PSMN1R8-30PL,127 RoHS compliant?
- Yes, it is RoHS compliant, making it suitable for use in environmentally conscious designs.