MT48LC4M32LFB5-8:G

Basic Information Overview

• Category: Memory
• Use: Random Access Memory (RAM)
• Characteristics: High-speed, low-power consumption
• Package: FBGA (Fine-pitch Ball Grid Array)
• Essence: Dynamic Random Access Memory (DRAM)
• Packaging/Quantity: Tape and Reel, 250 pieces per reel

Specifications

• Organization: 4 Meg x 32
• Voltage: 3.3V
• Speed: 8ns
• Interface: Parallel
• Operating Temperature: -40°C to +85°C
• Refresh: Auto-refresh and self-refresh modes
• Power Supply: Single power supply

Detailed Pin Configuration

The MT48LC4M32LFB5-8:G has a total of 86 pins. The pin configuration is as follows:

1. VDD
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. DQ8
43. DQ9
44. DQ10
45. DQ11
46. DQ12
47. DQ13
48. DQ14
49. DQ15
50. DQ16
51. DQ17
52. DQ18
53. DQ19
54. DQ20
55. DQ21
56. DQ22
57. DQ23
58. DQ24
59. DQ25
60. DQ26
61. DQ27
62. DQ28
63. DQ29
64. DQ30
65. DQ31
66. WE#
67. CAS#
68. RAS#
69. CS#
70. CKE
71. BA0
72. BA1
73. CLK
74. DQM0
75. DQM1
76. VSS
77. VSS
78. VSS
79. VSS
80. VSS
81. VSS
82. VSS
83. VSS
84. VSS
85. VSS
86. VSS

Functional Features

• High-speed operation: The MT48LC4M32LFB5-8:G offers fast access times, allowing for efficient data retrieval and processing.
• Low-power consumption: This memory module is designed to consume minimal power, making it suitable for energy-efficient applications.
• Auto-refresh and self-refresh modes: The device supports automatic refreshing of stored data, ensuring data integrity and reliability.
• Parallel interface: The parallel interface allows for quick and simultaneous data transfer between the memory module and the host system.

Advantages and Disadvantages

Advantages: - High-speed operation enables faster data processing. - Low-power consumption helps in reducing overall system power requirements. - Auto-refresh and self-refresh modes ensure data integrity. - Parallel interface allows for efficient data transfer.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Higher cost per unit compared to some alternative memory options. - Requires proper handling and ESD precautions during installation and usage.

Working Principles

The MT48LC4M32LFB5-8:G is a dynamic random access memory (DRAM) module. It stores data in capacitors within each memory cell, which must be periodically refreshed to maintain the stored information. The memory cells are organized in a 4 Meg x 32 configuration, allowing for the storage and retrieval of large amounts of data quickly.

During operation, the memory module receives address signals from the host system, which specify the location of the data to be read or written. The data is transferred through the parallel interface, utilizing the available data pins. The module supports various control signals such as WE#, CAS#, RAS#, CS#, CKE, and CLK, which facilitate the proper timing and synchronization of data transfers.

Detailed Application Field Plans

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