MT28EW512ABA1HJS-0AAT TR

Product Overview

Category

MT28EW512ABA1HJS-0AAT TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The data stored in this memory device is retained even when power is turned off.
• High capacity: The MT28EW512ABA1HJS-0AAT TR has a storage capacity of 512 megabits (64 megabytes).
• Fast access time: It provides quick access to stored data, ensuring efficient performance.
• Reliable: This memory device offers high reliability and durability, making it suitable for long-term use.
• Low power consumption: It operates with low power requirements, contributing to energy efficiency.

Package and Quantity

The MT28EW512ABA1HJS-0AAT TR is available in a compact surface-mount package. Each package contains one memory device.

Specifications

• Memory Type: Flash memory
• Capacity: 512 megabits (64 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: Up to 100,000 cycles

Pin Configuration

The detailed pin configuration of MT28EW512ABA1HJS-0AAT TR is as follows:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | VCC | Power supply voltage | | 2 | GND | Ground | | 3 | CS | Chip select | | 4 | SCK | Serial clock | | 5 | SI | Serial input | | 6 | SO | Serial output | | 7 | WP# | Write protect | | 8 | HOLD# | Hold input |

Functional Features

• High-speed data transfer: The MT28EW512ABA1HJS-0AAT TR supports fast data transfer rates, enabling efficient read and write operations.
• Flexible erase and program operations: It allows for individual sector erasure and programming, providing flexibility in managing data.
• Error correction: This memory device incorporates error correction techniques to ensure data integrity and reliability.
• Security features: It offers various security features like hardware protection and password protection to safeguard stored data.

Advantages

• Large storage capacity
• Fast access time
• Low power consumption
• High reliability and durability
• Flexible erase and program operations

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance due to erase/program cycles

Working Principles

The MT28EW512ABA1HJS-0AAT TR is based on flash memory technology. It utilizes floating-gate transistors to store and retrieve data. When data is written, charges are trapped in the floating gate, altering the transistor's behavior. These charges can be erased by applying a high voltage, allowing new data to be written.

Application Field Plans

The MT28EW512ABA1HJS-0AAT TR finds applications in various fields, including: - Computer systems - Mobile devices - Automotive electronics - Industrial control systems - Medical equipment

Alternative Models

Other alternative models with similar specifications and features include: - MT25QL512ABA1EW7-0SIT - W25Q512JVSIQ - S25FL512SAGMFI011

These alternative models can be considered based on specific requirements and compatibility with the target system.

In conclusion, the MT28EW512ABA1HJS-0AAT TR is a non-volatile memory device with high capacity, fast access time, and low power consumption. It offers reliable data storage and finds applications in various electronic systems. While it has advantages such as flexibility and security features, it also has limitations like higher cost and limited endurance. Understanding its specifications, pin configuration, and working principles helps in utilizing this memory device effectively.