M29W640GT60NA6E

Product Overview

Category

M29W640GT60NA6E belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and embedded systems.

Characteristics

• Non-volatile: The M29W640GT60NA6E retains stored data even when power is turned off.
• High capacity: This device offers a storage capacity of 64 megabits (8 megabytes).
• Fast access time: It provides quick access to stored data, ensuring efficient performance.
• Reliable: The M29W640GT60NA6E has a high level of reliability, ensuring data integrity over extended periods.
• Low power consumption: This device is designed to consume minimal power during operation.

Package and Quantity

The M29W640GT60NA6E is available in a compact surface-mount package. The exact package type and quantity may vary depending on the manufacturer and specific requirements.

Specifications

• Storage Capacity: 64 megabits (8 megabytes)
• Supply Voltage: 2.7V - 3.6V
• Access Time: 60 nanoseconds
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The M29W640GT60NA6E features a parallel interface with multiple pins for various functions. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A18: Address inputs
4. DQ0-DQ7: Data inputs/outputs
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control
8. RP#/BYTE#: Reset/byte select control
9. WP#/ACC: Write protect/acceleration control
10. RY/BY#: Ready/busy status output

Please refer to the product datasheet for a complete pin configuration diagram.

Functional Features

• Erase and Program Operations: The M29W640GT60NA6E supports both erase and program operations, allowing users to modify stored data as needed.
• Block Erase Capability: This device offers the ability to erase data in blocks, providing flexibility in managing memory space.
• Hardware Data Protection: The M29W640GT60NA6E includes hardware features that protect against accidental data corruption during power fluctuations or other system failures.
• High-Speed Read Access: With a fast access time of 60 nanoseconds, this device enables quick retrieval of stored data.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Reliable data retention
• Low power consumption
• Flexible block erase capability

Disadvantages

• Limited compatibility with certain systems due to the parallel interface
• Higher cost compared to some alternative memory technologies

Working Principles

The M29W640GT60NA6E utilizes flash memory technology to store data. It consists of multiple memory cells that can be electrically programmed and erased. When data is written to the memory, it is stored by modifying the charge level of individual memory cells. Reading data involves detecting the charge levels of these cells and converting them back into digital information.

Detailed Application Field Plans

The M29W640GT60NA6E finds applications in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Smartphones and tablets - Embedded systems - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

• M29W640GL70NA6E
• M29W640GB70NA6E
• M29W640GT70NA6E
• M29W640GL70NB6E

These alternative models offer similar specifications and functionality to the M29W640GT60NA6E, providing options for different system requirements.

Please note that the list of alternative models may vary depending on the manufacturer and availability in the market.

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