JS28F640J3F75E

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
  • Reliable data retention
• Package: Integrated Circuit (IC)
• Essence: Stores digital information in a compact and durable format
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Memory Type: NOR Flash
• Capacity: 64 Megabits (8 Megabytes)
• Organization: 8-bit parallel
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Access Time:
  • Random Read: 70 ns
  • Page Read: 25 ns
  • Program/Erase: 2 ms (typical)
• Endurance: 100,000 program/erase cycles (minimum)
• Data Retention: 20 years (minimum)

Pin Configuration

The JS28F640J3F75E has a total of 48 pins. The pin configuration is as follows:

1. VPP (Programming Voltage)
2. A0-A18 (Address Inputs)
3. DQ0-DQ7 (Data Input/Output)
4. WE# (Write Enable)
5. CE# (Chip Enable)
6. OE# (Output Enable)
7. RE# (Read Enable)
8. RP#/BYTE# (Ready/Busy or Byte Enable)
9. RY/BY# (Ready/Busy)
10. WP#/ACC (Write Protect/Acceleration)
11. RESET# (Reset)
12. VCC (Power Supply)
13. GND (Ground)

(Note: The remaining pins are not listed for brevity)

Functional Features

• High-speed read and write operations
• Efficient data storage and retrieval
• Reliable performance in various operating conditions
• Built-in error correction mechanisms
• Low power consumption
• Compatibility with standard interfaces and protocols

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast access times - High endurance - Reliable data retention - Low power consumption

Disadvantages: - Relatively higher cost compared to other memory technologies - Limited write endurance compared to some newer memory types

Working Principles

The JS28F640J3F75E utilizes NOR flash memory technology. It stores digital information by trapping electric charges within a grid of memory cells. These charges represent binary data (0s and 1s). The memory cells are organized into pages, blocks, and sectors for efficient read, write, and erase operations. When data is written or erased, the trapped charges are manipulated to change their state, allowing for the storage or removal of information.

Application Field Plans

The JS28F640J3F75E is widely used in various electronic devices that require non-volatile data storage. Some common application fields include:

1. Embedded Systems: Used in microcontrollers, industrial automation systems, and IoT devices.
2. Consumer Electronics: Found in smartphones, tablets, digital cameras, and portable media players.
3. Automotive: Used in infotainment systems, navigation units, and engine control modules.
4. Networking Equipment: Found in routers, switches, and network storage devices.
5. Medical Devices: Used in patient monitoring systems, diagnostic equipment, and medical imaging devices.

Alternative Models

• JS28F640J3D75E
• JS28F640J3C75E
• JS28F640J3B75E
• JS28F640J3A75E

(Note: The above alternative models are similar in specifications and functionality, but may differ in package type or temperature range.)

This entry provides a comprehensive overview of the JS28F640J3F75E flash memory. It covers its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.