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BZT52C9V1S-TP: Product Overview and Detailed Information
Introduction
The BZT52C9V1S-TP belongs to the category of voltage regulator diodes. This product is commonly used in electronic circuits to regulate voltage and protect sensitive components from overvoltage conditions. The BZT52C9V1S-TP possesses specific characteristics, packaging, and quantities that make it suitable for various applications.
Basic Information Overview
- Category: Voltage Regulator Diode
- Use: Voltage regulation and overvoltage protection in electronic circuits
- Characteristics: Low forward voltage drop, high surge capability, and precise voltage regulation
- Package: SOD-123 package
- Essence: Silicon semiconductor material
- Packaging/Quantity: Available in tape and reel packaging with varying quantities
Specifications
- Voltage Rating: 9.1V
- Power Dissipation: 300mW
- Forward Current: 200mA
- Operating Temperature Range: -65°C to +150°C
- Storage Temperature Range: -65°C to +175°C
Detailed Pin Configuration
The BZT52C9V1S-TP has a standard SOD-123 package with two pins. The pin configuration is as follows: - Pin 1: Anode - Pin 2: Cathode
Functional Features
- Precise voltage regulation at 9.1V
- High surge capability for overvoltage protection
- Low forward voltage drop for minimal power loss
Advantages and Disadvantages
Advantages
- Reliable voltage regulation
- Compact SOD-123 package
- High surge capability for overvoltage protection
Disadvantages
- Limited maximum forward current compared to other diode options
- Sensitive to excessive temperature variations
Working Principles
The BZT52C9V1S-TP operates based on the principle of zener breakdown. When the voltage across the diode reaches its specified zener voltage (9.1V), it begins conducting to regulate the voltage and limit any further increase.
Detailed Application Field Plans
The BZT52C9V1S-TP finds extensive use in various electronic applications, including: - Voltage regulation in power supplies - Overvoltage protection in sensor circuits - Signal conditioning in communication systems
Detailed and Complete Alternative Models
Some alternative models to the BZT52C9V1S-TP include: - BZX84C9V1LT1G - MMBZ5230BLT1G - PZU9.1B2,115
In conclusion, the BZT52C9V1S-TP is a vital component in electronic circuits, providing precise voltage regulation and overvoltage protection. Its compact package and functional features make it suitable for a wide range of applications.
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Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van BZT52C9V1S-TP in technische oplossingen
What is the maximum power dissipation of BZT52C9V1S-TP?
- The maximum power dissipation of BZT52C9V1S-TP is 300mW.
What is the forward voltage drop of BZT52C9V1S-TP?
- The forward voltage drop of BZT52C9V1S-TP is typically 0.9V at a forward current of 10mA.
What is the reverse standoff voltage of BZT52C9V1S-TP?
- The reverse standoff voltage of BZT52C9V1S-TP is 9.1V.
What is the maximum reverse leakage current of BZT52C9V1S-TP?
- The maximum reverse leakage current of BZT52C9V1S-TP is 0.1µA at the rated voltage.
What is the operating temperature range of BZT52C9V1S-TP?
- The operating temperature range of BZT52C9V1S-TP is -55°C to +150°C.
Can BZT52C9V1S-TP be used for overvoltage protection in electronic circuits?
- Yes, BZT52C9V1S-TP can be used for overvoltage protection due to its Zener diode characteristics.
Is BZT52C9V1S-TP suitable for voltage regulation applications?
- Yes, BZT52C9V1S-TP can be used for simple voltage regulation tasks within its specified parameters.
What are the typical applications of BZT52C9V1S-TP in technical solutions?
- BZT52C9V1S-TP is commonly used in voltage clamping, voltage reference, and overvoltage protection circuits.
Does BZT52C9V1S-TP require any external components for operation?
- BZT52C9V1S-TP can be used independently but may benefit from series resistors or capacitors for specific applications.
What are the key considerations when integrating BZT52C9V1S-TP into a technical solution?
- Key considerations include the maximum power dissipation, operating temperature range, and ensuring that the device operates within its specified parameters to achieve desired performance.