MX29LV400CBMC-55Q

Product Overview

Category

The MX29LV400CBMC-55Q belongs to the category of electronic memory devices.

Use

This product is primarily used for storing and retrieving digital information in various electronic systems.

Characteristics

• High storage capacity
• Fast read and write speeds
• Low power consumption
• Reliable data retention
• Wide operating temperature range

Package

The MX29LV400CBMC-55Q is available in a compact package, suitable for surface mount technology (SMT) applications.

Essence

The essence of this product lies in its ability to provide non-volatile storage capabilities for electronic devices.

Packaging/Quantity

The MX29LV400CBMC-55Q is typically packaged in reels or trays, with a quantity of [insert quantity].

Specifications

• Memory Type: Flash
• Capacity: 4 Megabits (512 Kilobytes)
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Interface: Parallel
• Access Time: 55ns

Detailed Pin Configuration

1. VCC - Power supply voltage
2. A0-A18 - Address inputs
3. DQ0-DQ7 - Data inputs/outputs
4. CE - Chip enable
5. OE - Output enable
6. WE - Write enable
7. RESET - Reset signal
8. WP - Write protect
9. RY/BY# - Ready/busy status output
10. ALE - Address latch enable
11. CLE - Command latch enable

(Note: This is a simplified pin configuration. Please refer to the datasheet for the complete pinout.)

Functional Features

• Random access to any memory location
• Byte-wise programming and erasing
• Sector erase capability
• Built-in hardware and software protection mechanisms
• Low power consumption in standby mode

Advantages and Disadvantages

Advantages

• High storage capacity for its size
• Fast read and write speeds
• Wide operating temperature range allows for use in various environments
• Reliable data retention ensures long-term storage integrity
• Low power consumption helps prolong battery life in portable devices

Disadvantages

• Limited storage capacity compared to newer memory technologies
• Slower access times compared to volatile memory types
• Susceptible to wear-out over time due to limited erase/write cycles

Working Principles

The MX29LV400CBMC-55Q utilizes flash memory technology, which is based on the principle of trapping electrical charges within a floating gate. These trapped charges represent binary data (0 or 1) and can be electrically programmed or erased.

When reading data, the memory controller applies appropriate voltages to the address lines and activates the chip enable (CE) and output enable (OE) signals. The requested data is then retrieved from the specified memory location and made available on the data lines.

During programming or erasing, specific voltage levels are applied to the control pins (such as write enable - WE) and address lines to perform the desired operation. This alters the charge distribution within the floating gate, thereby modifying the stored data.

Detailed Application Field Plans

The MX29LV400CBMC-55Q finds applications in various electronic systems, including but not limited to: - Consumer electronics (e.g., digital cameras, MP3 players) - Communication devices (e.g., routers, modems) - Automotive electronics (e.g., infotainment systems, engine control units) - Industrial equipment (e.g., programmable logic controllers, data loggers)

Its high storage capacity, reliability, and low power consumption make it suitable for these applications where non-volatile memory is required.

Detailed and Complete Alternative Models

• MX29LV800CBMC-70G: 8 Megabit flash memory with faster access time
• MX29LV160CBMC-90Q: 16 Megabit flash memory with higher storage capacity
• MX29LV320CBMC-55R: 32 Megabit flash memory with extended temperature range

(Note: These alternative models are provided for reference. Please consult the manufacturer's documentation for the most up-to-date information on available alternatives.)

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