IS62WV5128EBLL-45T2LI

Product Overview

Category: Integrated Circuit (IC)

Use: Memory device

Characteristics: - High-speed performance - Low power consumption - Large storage capacity - Reliable data retention

Package: TFBGA (Thin Fine-Pitch Ball Grid Array)

Essence: Non-volatile memory chip

Packaging/Quantity: Individually packaged, quantity varies based on customer requirements

Specifications

• Part Number: IS62WV5128EBLL-45T2LI
• Memory Type: Static Random Access Memory (SRAM)
• Density: 512 kilobits (64 kilobytes)
• Organization: 32K words x 16 bits
• Access Time: 45 nanoseconds
• Operating Voltage: 2.7V - 3.6V
• Standby Current: 10 microamps (typical)
• Package Dimensions: 8mm x 13mm
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS62WV5128EBLL-45T2LI has a total of 48 pins. The pin configuration is as follows:

1. A0-A14: Address Inputs
2. DQ0-DQ15: Data Input/Output
3. WE#: Write Enable
4. OE#: Output Enable
5. CE#: Chip Enable
6. UB#/LB#: Upper/Lower Byte Control
7. VCC: Power Supply
8. GND: Ground

Functional Features

• High-speed operation allows for fast data access and retrieval.
• Low power consumption makes it suitable for battery-powered devices.
• Large storage capacity provides ample space for storing data.
• Reliable data retention ensures that stored information remains intact.

Advantages

• Fast access time enhances overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Large storage capacity accommodates a wide range of applications.
• Reliable data retention ensures data integrity.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Higher cost per bit compared to some alternative memory solutions.
• Sensitivity to environmental conditions such as temperature and voltage fluctuations.

Working Principles

The IS62WV5128EBLL-45T2LI is based on Static Random Access Memory (SRAM) technology. It stores data using flip-flops, which retain information as long as power is supplied. The chip utilizes address inputs to select specific memory locations and data input/output lines for reading from or writing to those locations. Control signals such as Write Enable (WE#), Output Enable (OE#), and Chip Enable (CE#) govern the read and write operations.

Detailed Application Field Plans

The IS62WV5128EBLL-45T2LI is commonly used in various electronic devices and systems, including but not limited to: - Computers and servers - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics - Consumer electronics

Its high-speed performance, low power consumption, and reliable data retention make it suitable for applications that require fast and efficient data storage and retrieval.

Alternative Models

1. IS62WV5128EBLL-55T2LI: Similar to the IS62WV5128EBLL-45T2LI, but with a slightly slower access time of 55 nanoseconds.
2. IS62WV5128EBLL-35T2LI: Similar to the IS62WV5128EBLL-45T2LI, but with a faster access time of 35 nanoseconds.
3. IS62WV25616BLL-45T2LI: A lower-density version of the IS62WV5128EBLL-45T2LI, with 256 kilobits (32 kilobytes) of storage capacity.

These alternative models offer different access times and storage capacities to cater to specific application requirements.

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Note: The above content is a fictional entry for demonstration purposes only. The specifications and details provided may not correspond to any actual product.