IS61WV6416DBLL-10TLI-TR

Product Overview

Category

IS61WV6416DBLL-10TLI-TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Compact size
• Reliable performance

Package

IS61WV6416DBLL-10TLI-TR is available in a small outline package (SOP) which ensures easy integration into various electronic circuits.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS61WV6416DBLL-10TLI-TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Part Number: IS61WV6416DBLL-10TLI-TR
• Memory Type: Static Random Access Memory (SRAM)
• Organization: 64K words x 16 bits
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS61WV6416DBLL-10TLI-TR is as follows:

1. Vcc
2. WE#
3. OE#
4. A0-A15
5. DQ0-DQ15
6. CE#
7. UB#
8. LB#
9. NC
10. GND

(Note: "#" denotes an active low signal.)

Functional Features

• Random access capability
• Byte and page write operations
• Automatic power-down mode for reduced power consumption
• Output enable and write enable control for efficient data transfer

Advantages

• High-speed operation allows for quick data access and retrieval.
• Low power consumption helps in extending the battery life of portable devices.
• Large storage capacity enables the handling of vast amounts of data.
• Compact size facilitates integration into space-constrained electronic systems.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Limited storage capacity compared to other types of memory devices like hard drives or solid-state drives.
• Volatile nature requires constant power supply to retain stored data.

Working Principles

IS61WV6416DBLL-10TLI-TR is based on static random access memory (SRAM) technology. It utilizes flip-flops to store each bit of data, allowing for fast and direct access to the stored information. The data is retained as long as power is supplied to the device.

Detailed Application Field Plans

IS61WV6416DBLL-10TLI-TR finds applications in various fields, including:

1. Computers and laptops for main memory storage.
2. Smartphones and tablets for temporary data storage.
3. Networking equipment for buffering and caching purposes.
4. Industrial automation systems for storing critical data.
5. Automotive electronics for storing configuration settings and sensor data.

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS61WV6416DBLL-10TLI-TR include:

1. MT48LC16M16A2P-75IT: 64Mb SDRAM, 16-bit organization, 3.3V operating voltage.
2. AS6C4008-55SIN: 4Mb SRAM, 8-bit organization, 5V operating voltage.
3. CY62128ELL-45SXIT: 128Kb SRAM, 8-bit organization, 2.7V-3.6V operating voltage.

These alternative models can be considered based on specific requirements and compatibility with the target system.

In conclusion, IS61WV6416DBLL-10TLI-TR is a high-speed, low-power semiconductor memory device primarily used for data storage and retrieval in various electronic devices. Its compact size, large storage capacity, and reliable performance make it suitable for a wide range of applications. However, its limited storage capacity and volatile nature are important considerations. Alternative models provide additional options based on specific needs and system requirements.