IS61WV1288EEBLL-10TLI

Product Overview

Category

IS61WV1288EEBLL-10TLI belongs to the category of semiconductor memory products.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Compact package size
• Reliable performance

Package

IS61WV1288EEBLL-10TLI is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of IS61WV1288EEBLL-10TLI lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

This product is typically sold in reels or trays containing a specific quantity of chips, depending on the manufacturer's specifications.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 1 Meg x 8 bits
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: SOIC
• Pin Count: 32

Detailed Pin Configuration

The pin configuration of IS61WV1288EEBLL-10TLI is as follows:

```

Pin Name Description

A0-A19 Address Inputs DQ0-DQ7 Data Inputs/Outputs WE Write Enable OE Output Enable CE1, CE2 Chip Enables UB, LB Upper/Lower Byte Enables VCC Power Supply GND Ground ```

Functional Features

• Fast access time for efficient data retrieval.
• Low power consumption for energy-efficient operation.
• Easy integration into various electronic devices.
• Reliable performance for data integrity.
• Compatibility with standard memory interfaces.

Advantages and Disadvantages

Advantages

• High-speed operation allows for quick data access.
• Low power consumption prolongs battery life in portable devices.
• Large storage capacity accommodates a wide range of applications.
• Compact package size enables space-saving designs.
• Reliable performance ensures data integrity.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Volatile memory requires constant power supply to retain data.

Working Principles

IS61WV1288EEBLL-10TLI is based on static random access memory (SRAM) technology. It stores digital information using flip-flops, which retain their state as long as power is supplied. The memory cells are organized into an array, and each cell can store one bit of data. Accessing the stored data involves providing the appropriate address and control signals to read from or write to specific memory locations.

Detailed Application Field Plans

IS61WV1288EEBLL-10TLI finds application in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers - Mobile phones and smartphones - Tablets and handheld devices - Automotive electronics - Industrial control systems - Medical equipment - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS61WV1288EEBLL-10TLI include: - IS61WV12816BLL-10TLI - IS61WV102416BLL-10TLI - IS61WV5128BLL-10TLI - IS61WV25616BLL-10TLI

These models may differ in terms of storage capacity, organization, or operating voltage, but they serve the same purpose of providing high-speed, low-power memory solutions.

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