IS61WV102416DBLL-10BLI

Product Overview

Category

IS61WV102416DBLL-10BLI belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Compact package size
• Reliable performance

Package

IS61WV102416DBLL-10BLI is available in a small outline, thin profile (TSOP) package.

Essence

The essence of IS61WV102416DBLL-10BLI lies in its ability to provide fast and efficient data storage and retrieval in various electronic devices.

Packaging/Quantity

IS61WV102416DBLL-10BLI is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Part Number: IS61WV102416DBLL-10BLI
• Memory Type: Static Random Access Memory (SRAM)
• Organization: 1M words x 16 bits
• Operating Voltage: 3.3V
• Access Time: 10ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS61WV102416DBLL-10BLI is as follows:

1. Vcc
2. A0-A19
3. DQ0-DQ15
4. WE#
5. OE#
6. CE#

(Note: This is a simplified representation. Please refer to the datasheet for the complete pin configuration.)

Functional Features

• Fast access time allows for quick data retrieval.
• Low power consumption helps in energy-efficient operation.
• High storage capacity enables the handling of large amounts of data.
• Reliable performance ensures data integrity and system stability.

Advantages

• High-speed operation enhances overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Large storage capacity accommodates complex applications.
• Compact package size saves valuable board space.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Higher cost compared to other memory technologies.
• Limited scalability in terms of storage capacity.
• Volatile memory requires constant power supply to retain data.

Working Principles

IS61WV102416DBLL-10BLI is based on static random access memory (SRAM) technology. It stores data using flip-flops, which retain information as long as power is supplied. The memory cells are organized in a matrix, allowing for simultaneous access to multiple locations. When a read or write operation is performed, the appropriate address is provided, and the data is transferred through the data bus.

Detailed Application Field Plans

IS61WV102416DBLL-10BLI finds application in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles - Automotive electronics - Industrial control systems - Medical equipment

Detailed and Complete Alternative Models

Some alternative models to IS61WV102416DBLL-10BLI include: - MT48LC16M16A2P-75IT: 1M x 16-bit SDRAM - CY7C1041DV33-10BVXI: 1M x 16-bit SRAM - K6R1016C1D-JC10: 1M x 16-bit SRAM - AS7C1024B-15TIN: 1M x 16-bit SRAM

(Note: This is not an exhaustive list. There are several alternative models available in the market.)

In conclusion, IS61WV102416DBLL-10BLI is a high-speed, low-power, and reliable semiconductor memory device used for data storage and retrieval in various electronic devices. Its compact size, large storage capacity, and efficient performance make it suitable for a wide range of applications. However, it is important to consider the specific requirements and alternatives available when selecting a memory device for a particular application.