IS46DR16128A-3DBLA1-TR

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory module for electronic devices
• Characteristics:
  • High-speed operation
  • Low power consumption
  • Compact size
• Package: Surface Mount Technology (SMT) package
• Essence: Non-volatile memory storage
• Packaging/Quantity: Tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 16 Megabits (2 Megabytes)
• Organization: 1M x 16 bits
• Supply Voltage: 1.7V - 1.95V
• Operating Temperature Range: -40°C to +85°C
• Data Rate: 166 MHz
• Interface: Parallel

Detailed Pin Configuration

The IS46DR16128A-3DBLA1-TR IC has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VDD | Power supply voltage | | 2 | VSS | Ground | | 3 | A0 | Address input bit 0 | | 4 | A1 | Address input bit 1 | | ... | ... | ... | | 48 | DQ15 | Data output bit 15 | | 49 | /CS | Chip select (active low) | | 50 | /RAS | Row address strobe (active low) | | 51 | /CAS | Column address strobe (active low) | | 52 | /WE | Write enable (active low) |

Functional Features

• High-speed operation allows for quick data access and transfer.
• Low power consumption helps conserve energy in electronic devices.
• Compact size enables integration into space-constrained designs.
• Non-volatile memory storage retains data even when power is lost.

Advantages and Disadvantages

Advantages: - High-speed operation improves overall system performance. - Low power consumption extends battery life in portable devices. - Compact size facilitates miniaturization of electronic products. - Non-volatile memory ensures data integrity during power interruptions.

Disadvantages: - Limited capacity compared to other memory technologies. - Relatively higher cost per unit compared to some alternatives. - Susceptible to data loss if not properly backed up or protected.

Working Principles

The IS46DR16128A-3DBLA1-TR is a dynamic random access memory (DRAM) module. It stores data using a capacitor-based cell structure, where each bit of data is stored as an electrical charge in a tiny capacitor. To read or write data, the IC uses row and column address strobes to access specific memory locations. The data is then transferred through the parallel interface.

Detailed Application Field Plans

The IS46DR16128A-3DBLA1-TR IC is commonly used in various electronic devices that require high-speed and low-power memory modules. Some application fields include: - Mobile phones and smartphones - Tablets and laptops - Gaming consoles - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

• IS46DR08160A-3DBLA1-TR: 8 Megabit (1 Megabyte) capacity, 512K x 16 bits organization.
• IS46DR32160A-3DBLA1-TR: 32 Megabit (4 Megabytes) capacity, 2M x 16 bits organization.
• IS46DR64160A-3DBLA1-TR: 64 Megabit (8 Megabytes) capacity, 4M x 16 bits organization.
• IS46DR128160A-3DBLA1-TR: 128 Megabit (16 Megabytes) capacity, 8M x 16 bits organization.

(Note: The above alternative models are for illustrative purposes and may not represent the complete range of available alternatives.)

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