IS45S32400F-6BLA1-TR

Product Overview

Category: Integrated Circuit (IC)

Use: Memory device

Characteristics: - High-speed operation - Low power consumption - Small form factor - Wide temperature range

Package: BGA (Ball Grid Array)

Essence: The IS45S32400F-6BLA1-TR is a high-performance memory IC designed for various applications that require fast and reliable data storage.

Packaging/Quantity: The IS45S32400F-6BLA1-TR is typically packaged in reels and comes in quantities of 2500 units per reel.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Memory Size: 256 Megabits (32 Megabytes)
• Organization: 4 banks x 4,194,304 words x 16 bits
• Operating Voltage: 2.5V - 3.3V
• Clock Frequency: Up to 166 MHz
• Data Rate: Up to 333 Mbps
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS45S32400F-6BLA1-TR has a total of 66 pins. Here is the detailed pin configuration:

• Pins 1-22: Address Inputs (A0-A21)
• Pins 23-30: Data Inputs/Outputs (DQ0-DQ7)
• Pins 31-34: Bank Select Inputs (BA0-BA3)
• Pins 35-36: Clock Inputs (CLK, CLK#)
• Pins 37-38: Chip Enable Inputs (CE#, CE2#)
• Pins 39-40: Write Enable Inputs (WE#, WE2#)
• Pins 41-42: Output Enable Inputs (OE#, OE2#)
• Pins 43-44: Data Mask Inputs (DM, DM#)
• Pins 45-46: Burst Address Inputs (BA1, BA0)
• Pins 47-48: Burst Length Inputs (BL1, BL0)
• Pins 49-52: Data Strobe Inputs (LDQS, UDQS, LDQS#, UDQS#)
• Pins 53-54: Data Strobe Outputs (DQS, DQS#)
• Pins 55-56: Data Strobe Mask Inputs (DQM0, DQM1)
• Pins 57-58: Power Supply (VDD, VDDQ)
• Pins 59-60: Ground (GND)
• Pins 61-66: No Connection (NC)

Functional Features

• High-speed operation allows for quick data access and transfer.
• Low power consumption ensures efficient energy usage.
• Small form factor enables space-saving designs in various applications.
• Wide temperature range makes it suitable for use in extreme environments.

Advantages and Disadvantages

Advantages: - Fast and reliable data storage - Low power consumption - Compact size - Suitable for harsh environments

Disadvantages: - Limited memory capacity compared to higher-end models - Parallel interface may not be compatible with all systems

Working Principles

The IS45S32400F-6BLA1-TR operates based on the synchronous dynamic random-access memory (SDRAM) technology. It stores data in a matrix of capacitors, which are organized into multiple banks. The memory cells are accessed by providing the appropriate address and control signals. The data is read or written in synchronization with the clock signal, allowing for high-speed operation.

Detailed Application Field Plans

The IS45S32400F-6BLA1-TR is widely used in various applications, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

Here are some alternative models that offer similar functionality to the IS45S32400F-6BLA1-TR:

1. MT48LC32M16A2P-75: 512 Megabit SDRAM, parallel interface, 3.3V operation.
2. AS4C32M16SB-7TCN: 512 Megabit SDRAM, parallel interface, 2.5V operation.
3. K4S561632H-UC75: 256 Megabit SDRAM, parallel interface, 3.3V operation.

These alternative models can be considered based on specific requirements and compatibility with the target system.

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