X1226S8T1

Product Overview

Category: Integrated Circuit (IC)

Use: X1226S8T1 is a non-volatile static RAM (NVSRAM) integrated circuit. It combines the benefits of both SRAM and EEPROM, providing high-speed read/write operations along with non-volatile data storage.

Characteristics: - Non-volatile memory - High-speed read/write operations - Low power consumption - Small form factor - Wide operating voltage range

Package: X1226S8T1 is available in an 8-pin SOIC (Small Outline Integrated Circuit) package.

Essence: The essence of X1226S8T1 lies in its ability to retain data even when the power supply is disconnected. This makes it ideal for applications where data integrity is crucial.

Packaging/Quantity: X1226S8T1 is typically sold in reels containing multiple units. The exact quantity may vary depending on the supplier.

Specifications

• Memory Size: 2Kb (256 x 8 bits)
• Supply Voltage Range: 2.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 100 years
• Write Endurance: 1 million cycles

Detailed Pin Configuration

The X1226S8T1 IC has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage input | | 2 | GND | Ground reference | | 3 | SDA | Serial data input/output | | 4 | SCL | Serial clock input | | 5 | WP | Write protect input | | 6 | NC | No connection | | 7 | NC | No connection | | 8 | VBAT | Battery backup voltage input |

Functional Features

• Non-volatile storage: X1226S8T1 retains data even when power is disconnected.
• High-speed operation: Allows for fast read and write access to memory.
• Low power consumption: Optimized power usage for extended battery life.
• Write protection: The WP pin can be used to protect the stored data from accidental modification.

Advantages and Disadvantages

Advantages: - Non-volatile memory ensures data integrity - High-speed read/write operations - Low power consumption - Compact form factor

Disadvantages: - Limited memory size (2Kb) - Relatively higher cost compared to traditional SRAM

Working Principles

X1226S8T1 utilizes a combination of volatile SRAM and non-volatile EEPROM technologies. When power is supplied, the device operates as a standard SRAM, allowing fast read and write operations. However, it also includes an integrated charge pump and energy storage elements that enable the transfer of data to non-volatile EEPROM cells during power loss. This ensures that the data remains intact even when the power supply is disconnected.

Detailed Application Field Plans

X1226S8T1 finds applications in various fields where data integrity is critical, such as: - Industrial control systems - Medical devices - Automotive electronics - Smart meters - Data loggers

Detailed and Complete Alternative Models

Some alternative models to X1226S8T1 with similar functionality include: - X1225S8T1 - X1227S8T1 - X1228S8T1

These models offer different memory sizes and additional features, providing flexibility to suit specific application requirements.

Word count: 408 words