Infineon Technologies
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IPSA70R600CEAKMA1
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IPSA70R600CEAKMA1

Product Overview

Category: Electronic Component
Use: Power Management
Characteristics: High efficiency, low power consumption
Package: TO-220AB
Essence: MOSFET
Packaging/Quantity: Tube/50 units

Specifications

  • Voltage - Rated: 700V
  • Current - Non-Continuous (Tc): 70A
  • Rds On (Max): 600mOhm
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) @ Vds: 3700pF @ 25V
  • Power Dissipation (Max): 300W

Detailed Pin Configuration

  1. Gate
  2. Drain
  3. Source

Functional Features

  • High voltage capability
  • Low gate charge
  • Fast switching speed
  • Low on-resistance

Advantages and Disadvantages

Advantages: - High efficiency - Low power consumption - Fast switching speed

Disadvantages: - Higher cost compared to some alternatives - Sensitive to static electricity

Working Principles

The IPSA70R600CEAKMA1 is a MOSFET designed for power management applications. It operates by controlling the flow of current between the drain and source terminals based on the voltage applied to the gate terminal.

Detailed Application Field Plans

This component is commonly used in power supplies, motor control, and other high-voltage applications where efficient power management is essential.

Detailed and Complete Alternative Models

  1. IRF840
  2. STP80NF70

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Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van IPSA70R600CEAKMA1 in technische oplossingen

  1. What is IPSA70R600CEAKMA1?

    • IPSA70R600CEAKMA1 is a high-power MOSFET transistor designed for use in various technical solutions, such as power supplies and motor control.

  2. What are the key specifications of IPSA70R600CEAKMA1?

    • The key specifications include a maximum drain-source voltage of 700V, continuous drain current of 70A, and low on-resistance.

  3. In what applications can IPSA70R600CEAKMA1 be used?

    • IPSA70R600CEAKMA1 is commonly used in applications such as industrial power supplies, motor drives, and solar inverters.

  4. What are the thermal considerations for IPSA70R600CEAKMA1?

    • Proper heat sinking and thermal management are essential for ensuring the reliable operation of IPSA70R600CEAKMA1 in high-power applications.

  5. Does IPSA70R600CEAKMA1 require any special driving circuitry?

    • IPSA70R600CEAKMA1 may require appropriate gate driving circuitry to ensure efficient switching and protection against overvoltage or overcurrent conditions.

  6. Are there any recommended layout considerations for using IPSA70R600CEAKMA1?

    • It is important to follow recommended PCB layout guidelines to minimize parasitic inductance and ensure proper thermal dissipation.

  7. What are the typical performance characteristics of IPSA70R600CEAKMA1?

    • Typical performance characteristics include low switching losses, fast switching speed, and high efficiency in power conversion applications.

  8. How does IPSA70R600CEAKMA1 compare to other similar MOSFET transistors?

    • IPSA70R600CEAKMA1 offers a balance of high voltage capability, low on-resistance, and robustness, making it suitable for demanding technical solutions.

  9. What are the potential challenges when using IPSA70R600CEAKMA1 in a design?

    • Challenges may include managing high currents, minimizing voltage spikes, and ensuring proper EMI/EMC compliance in the application.

  10. Where can I find detailed application notes and reference designs for IPSA70R600CEAKMA1?

    • Detailed application notes and reference designs for IPSA70R600CEAKMA1 can be found on the manufacturer's website or through authorized distributors.