MB85RC16VPNF-G-JNN1E1

Product Overview

Category: Non-volatile RAM (NVRAM)

Use: The MB85RC16VPNF-G-JNN1E1 is a non-volatile RAM product that combines the benefits of both RAM and flash memory. It can be used as a storage solution in various electronic devices, such as computers, smartphones, and IoT devices.

Characteristics: - Non-volatile: Retains data even when power is disconnected - High-speed read/write operations - Low power consumption - Wide operating temperature range - High endurance and data retention

Package: The MB85RC16VPNF-G-JNN1E1 is available in a compact package, suitable for surface mount technology (SMT) assembly.

Essence: This NVRAM product provides a reliable and efficient solution for storing data in electronic devices, ensuring data integrity and fast access times.

Packaging/Quantity: The MB85RC16VPNF-G-JNN1E1 is typically packaged in reels or trays, with a quantity of 2500 units per reel/tray.

Specifications

• Capacity: 16 kilobits (2 kilobytes)
• Interface: I2C (2-wire serial interface)
• Operating voltage: 1.7V to 3.6V
• Operating temperature range: -40°C to +85°C
• Data retention: Up to 10 years
• Endurance: 10^6 write cycles

Detailed Pin Configuration

The MB85RC16VPNF-G-JNN1E1 has a standard 8-pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. SDA: Serial data input/output pin
4. SCL: Serial clock input pin
5. WP: Write protect pin
6. NC: No connection
7. NC: No connection
8. NC: No connection

Functional Features

• Non-volatile storage: The MB85RC16VPNF-G-JNN1E1 retains data even when power is disconnected, ensuring data integrity.
• High-speed operation: It offers fast read and write operations, making it suitable for applications requiring quick access to stored data.
• Low power consumption: The NVRAM product consumes minimal power during both active and standby modes, contributing to energy efficiency in electronic devices.
• Wide operating temperature range: It can operate reliably in extreme temperature conditions, making it suitable for various environments.
• High endurance and data retention: The MB85RC16VPNF-G-JNN1E1 has a high endurance of 10^6 write cycles and can retain data for up to 10 years.

Advantages and Disadvantages

Advantages: - Non-volatile storage ensures data integrity - Fast read/write operations - Low power consumption - Wide operating temperature range - High endurance and data retention

Disadvantages: - Limited capacity (16 kilobits)

Working Principles

The MB85RC16VPNF-G-JNN1E1 utilizes ferroelectric random-access memory (FeRAM) technology. FeRAM combines the benefits of RAM and flash memory, offering non-volatile storage with fast read/write operations. It uses a ferroelectric material that can retain its polarization state even when power is disconnected. This allows for reliable and efficient data storage in electronic devices.

Detailed Application Field Plans

The MB85RC16VPNF-G-JNN1E1 can be used in various applications, including: 1. Computers and servers: Storing system configuration data, BIOS settings, and other critical information. 2. Smartphones and tablets: Storing user preferences, application data, and secure information. 3. IoT devices: Storing sensor data, device configurations, and firmware updates.

Detailed and Complete Alternative Models

1. MB85RC16V: Similar to the MB85RC16VPNF-G-JNN1E1, but without the write protect pin.
2. MB85RC32V: Double the capacity of the MB85RC16VPNF-G-JNN1E1 (32 kilobits).
3. MB85RC64V: Four times the capacity of the MB85RC16VPNF-G-JNN1E1 (64 kilobits).

These alternative models offer similar features and characteristics, providing flexibility in choosing the appropriate NVRAM solution for specific applications.

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