MB85R256FPNF-G-JNERE2

Product Overview

• Category: Non-volatile RAM (Random Access Memory)
• Use: Data storage in various electronic devices
• Characteristics:
  • Non-volatile: Retains data even when power is turned off
  • High-speed read and write operations
  • Low power consumption
• Package: SOP (Small Outline Package)
• Essence: Provides reliable and efficient non-volatile data storage solution
• Packaging/Quantity: Available in reels, quantity depends on customer requirements

Specifications

• Memory Capacity: 256 kilobits (32 kilobytes)
• Interface: I2C (Inter-Integrated Circuit)
• Operating Voltage: 1.7V to 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Minimum 10 years
• Write Endurance: 10^6 cycles

Detailed Pin Configuration

The MB85R256FPNF-G-JNERE2 has the following pin configuration:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | VSS | Ground | | 2 | SDA | Serial Data Line | | 3 | SCL | Serial Clock Line | | 4 | WP | Write Protect | | 5 | VCC | Power Supply |

Functional Features

• Non-volatile data storage: Retains data even without power
• High-speed operation: Allows fast read and write access
• Low power consumption: Ideal for battery-powered devices
• Write protection: Prevents accidental modification of stored data
• Compatibility: Supports I2C interface for easy integration into existing systems

Advantages and Disadvantages

Advantages: - Non-volatile nature ensures data integrity - High-speed operation improves system performance - Low power consumption extends battery life - Write protection feature enhances data security

Disadvantages: - Limited storage capacity compared to other memory types - Relatively higher cost per bit compared to volatile RAM

Working Principles

The MB85R256FPNF-G-JNERE2 is based on Ferroelectric Random Access Memory (FeRAM) technology. It utilizes a ferroelectric material that can retain its polarization state even when the power is turned off. This allows for non-volatile data storage. The memory cells in FeRAM consist of a capacitor and a transistor, where the polarization of the ferroelectric material represents the stored data.

Detailed Application Field Plans

The MB85R256FPNF-G-JNERE2 is widely used in various electronic devices that require reliable and non-volatile data storage. Some common application fields include:

1. Industrial Control Systems: Used for storing critical configuration data and event logs in PLCs (Programmable Logic Controllers) and SCADA (Supervisory Control and Data Acquisition) systems.
2. Automotive Electronics: Provides data storage for vehicle diagnostics, infotainment systems, and instrument clusters.
3. Consumer Electronics: Used in smart appliances, wearables, and IoT devices for storing user preferences, settings, and sensor data.
4. Medical Devices: Enables secure and persistent storage of patient data in medical equipment and wearable health monitors.

Detailed and Complete Alternative Models

1. MB85RC256V: Similar specifications but available in a different package (TSOP)
2. FM25V02A: Serial EEPROM with similar capacity and interface, but lower write endurance
3. MR25H256: Another FeRAM chip with higher capacity (256 kilobits) and wider operating temperature range (-55°C to +125°C)

(Note: The above alternative models are provided for reference and may have slight differences in specifications and features. It is recommended to consult the respective datasheets for detailed information.)

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