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NE85633-T1B-R25-A
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NE85633-T1B-R25-A

Product Overview

  • Category: Integrated Circuit
  • Use: RF Amplifier
  • Characteristics: High gain, low noise figure
  • Package: SOT-343
  • Essence: Amplification of radio frequency signals
  • Packaging/Quantity: 2500 pieces per reel

Specifications

  • Frequency Range: 100 MHz to 6 GHz
  • Gain: 15 dB
  • Noise Figure: 0.8 dB
  • Supply Voltage: 3 V
  • Current Consumption: 5 mA

Detailed Pin Configuration

  • Pin 1: RF Input
  • Pin 2: Ground
  • Pin 3: RF Output
  • Pin 4: Supply Voltage

Functional Features

  • High gain and low noise figure for amplifying weak RF signals
  • Wide frequency range for versatile applications
  • Low power consumption for energy efficiency

Advantages and Disadvantages

  • Advantages:
    • Excellent gain and noise figure characteristics
    • Wide frequency range
    • Low power consumption
  • Disadvantages:
    • Sensitive to voltage fluctuations
    • Limited output power capability

Working Principles

The NE85633-T1B-R25-A operates by amplifying the input RF signal with minimal added noise, making it suitable for applications requiring high sensitivity and low noise performance.

Detailed Application Field Plans

This amplifier is ideal for use in: - Radio communication systems - Wireless infrastructure - Radar systems - Test and measurement equipment

Detailed and Complete Alternative Models

  • NE85633-T1A-R25-A
  • NE85633-T1C-R25-A
  • NE85633-T1D-R25-A

This entry provides a comprehensive overview of the NE85633-T1B-R25-A, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van NE85633-T1B-R25-A in technische oplossingen

  1. What is NE85633-T1B-R25-A?

    • NE85633-T1B-R25-A is a high-frequency, low-noise amplifier transistor commonly used in RF and microwave applications.

  2. What are the key specifications of NE85633-T1B-R25-A?

    • The key specifications include a frequency range of 0.3 to 6 GHz, a noise figure of 0.9 dB at 2 GHz, and a gain of 13 dB at 2 GHz.

  3. In what technical solutions can NE85633-T1B-R25-A be used?

    • NE85633-T1B-R25-A can be used in applications such as cellular infrastructure, satellite communication, radar systems, and test equipment.

  4. How does NE85633-T1B-R25-A contribute to low-noise performance?

    • NE85633-T1B-R25-A features a low noise figure, which helps minimize signal degradation in sensitive receiver systems.

  5. What are the typical operating conditions for NE85633-T1B-R25-A?

    • The typical operating voltage is 5V, and the operating temperature range is -40°C to 110°C.

  6. Can NE85633-T1B-R25-A be used in high-frequency designs?

    • Yes, NE85633-T1B-R25-A is designed for high-frequency applications, with a frequency range extending up to 6 GHz.

  7. Does NE85633-T1B-R25-A require any special handling during assembly?

    • It is recommended to follow standard ESD precautions and proper RF design practices during assembly to ensure optimal performance.

  8. What are the typical circuit configurations for integrating NE85633-T1B-R25-A?

    • Common circuit configurations include common emitter and common base configurations, depending on the specific application requirements.

  9. Are there any known reliability issues with NE85633-T1B-R25-A?

    • NE85633-T1B-R25-A is known for its reliability and robustness when operated within its specified operating conditions.

  10. Where can I find detailed application notes and reference designs for NE85633-T1B-R25-A?

    • Detailed application notes and reference designs for NE85633-T1B-R25-A can be found on the manufacturer's website or through authorized distributors.