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AS7C1026B-12TCNTR

AS7C1026B-12TCNTR

Product Overview

Category

AS7C1026B-12TCNTR belongs to the category of semiconductor memory devices.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

  • High-speed operation
  • Low power consumption
  • Non-volatile memory
  • Large storage capacity
  • Reliable performance

Package

AS7C1026B-12TCNTR is available in a compact and durable package, designed to withstand various environmental conditions.

Essence

The essence of AS7C1026B-12TCNTR lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

AS7C1026B-12TCNTR is typically packaged in trays or reels, with each package containing a specific quantity of memory chips.

Specifications

  • Part Number: AS7C1026B-12TCNTR
  • Memory Type: Static Random Access Memory (SRAM)
  • Organization: 1 Megabit x 16-bit
  • Operating Voltage: 3.3V
  • Access Time: 12 nanoseconds
  • Interface: Parallel
  • Package Type: 44-TSOP II

Detailed Pin Configuration

AS7C1026B-12TCNTR has a total of 44 pins, each serving a specific function. The pin configuration is as follows:

  1. Vcc
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. DQ0
  19. DQ1
  20. DQ2
  21. DQ3
  22. DQ4
  23. DQ5
  24. DQ6
  25. DQ7
  26. WE#
  27. OE#
  28. CE#
  29. UB#
  30. LB#
  31. Vss
  32. NC
  33. NC
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC

Functional Features

  • High-speed data access and retrieval
  • Low power consumption during standby mode
  • Easy integration into various electronic systems
  • Reliable performance in demanding environments
  • Compatibility with standard memory interfaces

Advantages and Disadvantages

Advantages

  • Fast data access time
  • Low power consumption
  • Large storage capacity
  • Compact package size
  • Reliable performance

Disadvantages

  • Relatively higher cost compared to other memory technologies
  • Volatile memory (data loss upon power failure)

Working Principles

AS7C1026B-12TCNTR operates based on the principles of static random access memory (SRAM). It stores digital information in a volatile manner, meaning that the stored data is lost when power is removed. The memory cells within the chip are organized in a matrix, allowing for quick and direct access to specific memory locations.

Detailed Application Field Plans

AS7C1026B-12TCNTR finds applications in various fields, including:

  1. Computers and laptops
  2. Networking equipment
  3. Telecommunications devices
  4. Automotive electronics
  5. Industrial control systems
  6. Consumer electronics
  7. Medical devices
  8. Aerospace and defense systems

Detailed and Complete Alternative Models

  1. AS7C1026B-15TCNTR
  2. AS7C1026B-20TCNTR
  3. AS7C1026B-25TCNTR
  4. AS7C1026B-30TCNTR
  5. AS7C1026B-35TCNTR

These alternative models offer different access times, allowing users to choose the one that best suits their specific requirements.

In conclusion, AS7C1026B-12TCNTR is a high-speed and reliable semiconductor memory device used for data storage and retrieval in various electronic systems. Its compact package, low power consumption, and large storage capacity make it suitable for a wide range of applications. However, its volatile nature and relatively higher cost should be considered when selecting this memory device.

Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van AS7C1026B-12TCNTR in technische oplossingen

Sure! Here are 10 common questions and answers related to the application of AS7C1026B-12TCNTR in technical solutions:

  1. Q: What is AS7C1026B-12TCNTR? A: AS7C1026B-12TCNTR is a specific type of SRAM (Static Random Access Memory) chip with a capacity of 1 Megabit (128K x 8 bits).

  2. Q: What is the operating voltage range for AS7C1026B-12TCNTR? A: The operating voltage range for AS7C1026B-12TCNTR is typically between 4.5V and 5.5V.

  3. Q: What is the access time of AS7C1026B-12TCNTR? A: The access time of AS7C1026B-12TCNTR is 12 nanoseconds (ns), which refers to the time it takes to read or write data from/to the memory.

  4. Q: Can AS7C1026B-12TCNTR be used in battery-powered devices? A: Yes, AS7C1026B-12TCNTR can be used in battery-powered devices as long as the operating voltage requirements are met.

  5. Q: Is AS7C1026B-12TCNTR compatible with standard microcontrollers? A: Yes, AS7C1026B-12TCNTR is compatible with most standard microcontrollers that support SRAM interfacing.

  6. Q: What is the package type of AS7C1026B-12TCNTR? A: AS7C1026B-12TCNTR comes in a 32-pin Thin Small Outline Package (TSOP).

  7. Q: Can AS7C1026B-12TCNTR be used in industrial temperature environments? A: Yes, AS7C1026B-12TCNTR is designed to operate within the industrial temperature range of -40°C to +85°C.

  8. Q: Does AS7C1026B-12TCNTR support simultaneous read and write operations? A: No, AS7C1026B-12TCNTR does not support simultaneous read and write operations. It operates in a single-read/single-write mode.

  9. Q: What is the standby current consumption of AS7C1026B-12TCNTR? A: The standby current consumption of AS7C1026B-12TCNTR is typically very low, usually in the microampere (µA) range.

  10. Q: Can AS7C1026B-12TCNTR be used as a cache memory in computer systems? A: Yes, AS7C1026B-12TCNTR can be used as a cache memory in computer systems where low latency and fast access times are required.

Please note that these answers are general and may vary depending on specific datasheet specifications or application requirements.